Sample
Name
C2H6 crystalline - dep 15K
Date
1995-06-13
Diameter
20000.0 μm
Surface roughness
very low
Substrate material
CsI
Substrate comments
disk diameter 25mm, thickness 2mm
Temperature
15.0 ± 0.5 K
Temperature max
15.0 ± 0.5 K
Title
Condensation of (partly)crystalline C2H6 solid thin film

Precursors

Matters

Produced sample

Sample
C2H6 crystalline - dep 15K (this sample)
Processing steps
Step Chronology Date Type Process Changes
#1 during layer formation 1996-01-01 layer formation room temperature C2H6 gas deposited under high vacuum on a CsI substrate cooled at 15 K from gas to (partly) crystalline solid phase