Sample
Name
$L1_0$ CoPt deposited on silicium
Database
Experimentalists
Date
2018-04-18
Physical characteristics
Thickness
1.53e-08 $mm$
Diameter
10.0 $mm$
Substrate material
Silicium
Substrate comments
Silicium wafer Si(100) - 350 microns
Comments
After deposition of all the layers, the sample is annealed under vacuum at 700◦C for 20 min.
Temperature
25.0 $\pm$ -268.1 $^{\circ}C$
Temperature max
19.85 $^{\circ}C$
Type
ambient air
Pressure
1.0 $atm$
Number
12
Arrangement
6 successive alternate adsorbed layers of Co and Pt
Layers