Sample
Name
L10 FePt deposited on silicium
Date
2018-04-18
Thickness
1.53e-08 mm
Diameter
10.0 mm
Substrate material
Silicium
Substrate comments
Silicium wafer Si(100) - 350 microns
Comments
After deposition of all the layers, the sample is annealed under vacuum at 700◦C for 20 min.
Temperature
25.0 ± -268.1 C
Temperature max
19.85 C
Number
12
Arrangement
6 successive alternate adsorbed layers of Fe and Pt
Layers