Experiment
Co K edge, Fe K edge and Pt L3 edge XAS fluorescence of CoFePt nanocomposite films
Sub-Experiment
Co K edge XAS fluorescence of CoFePt nanocomposite films
Spectrum
Co K edge XAS fluorescence of CoFePt deposited on silicium (normal incidence: 5°)
Spectrum
Co K edge XAS fluorescence of CoFePt deposited on silicium (classical incidence: 45°)
Spectrum
Co K edge XAS fluorescence of CoFePt deposited on silicium (grazing incidence: 85°)
Spectrum
Co K edge XAS fluorescence of $L1_0$ CoPt deposited on silicium (normal incidence: 5°)
Spectrum
Co K edge XAS fluorescence of $L1_0$ CoPt deposited on silicium (grazing incidence: 85°)
Sub-Experiment
Fe K edge XAS fluorescence of CoFePt nanocomposite films
Spectrum
Fe K edge XAS fluorescence of CoFePt deposited on silicium (normal incidence: 5°)
Spectrum
Fe K edge XAS fluorescence of CoFePt deposited on silicium (classical incidence: 45°)
Spectrum
Fe K edge XAS fluorescence of CoFePt deposited on silicium (grazing incidence: 85°)
Spectrum
Fe K edge XAS fluorescence of $L1_0$ FePt deposited on silicium (normal incidence: 5°)
Spectrum
Fe K edge XAS fluorescence of $L1_0$ FePt deposited on silicium (classical incidence: 45°)
Spectrum
Fe K edge XAS fluorescence of $L1_0$ FePt deposited on silicium (grazing incidence: 85°)
Sub-Experiment
Pt L3 edge XAS fluorescence of CoFePt nanocomposite films
Spectrum
Pt L3 edge XAS fluorescence of CoFePt deposited on silicium (normal incidence: 5°)
Spectrum
Pt L3 edge XAS fluorescence of CoFePt deposited on silicium (grazing incidence: 85°)
Spectrum
Pt L3 edge XAS fluorescence of $L1_0$ CoPt deposited on silicium (normal incidence: 5°)
Spectrum
Pt L3 edge XAS fluorescence of $L1_0$ CoPt deposited on silicium (grazing incidence: 85°)
Spectrum
Pt L3 edge XAS fluorescence of $L1_0$ FePt deposited on silicium (normal incidence: 5°)
Spectrum
Pt L3 edge XAS fluorescence of $L1_0$ FePt deposited on silicium (grazing incidence: 85°)
Layer
- Name
- Pt
- Order
- 15
- Type of layer
- other
- Thickness
- 1.4e-09 $mm$
- Formation mode
- EBPVD
- Temperature
- 293.0 $K$
- Fluid pressure
- 1.0e-13 $bar$
- Comments
- Deposited by an electron-beam evaporator.