CoFePt deposited on silicium | FAME | SSHADE

Sample

Name: CoFePt deposited on silicium

Owner of sample

Database

FAME

Experimentalists

Origin of sample

Date: 2018-04-18

Physical characteristics

Thickness: 2.13e-08 $mm$
Diameter: 10.0 $mm$
Substrate material: Silicium
Substrate comments: Silicium wafer Si(100) - 350 microns
Comments: After deposition of all the layers, the sample is annealed under vacuum at 700◦C for 20 min.

Sample environment: Temperature

Temperature: 25.0 $\pm$ -268.1 $^{\circ}C$
Temperature max: 19.85 $^{\circ}C$

Sample environment: Fluid

Type: ambient air

Sample environment: Mechanical pressure

Pressure: 1.0 $atm$

Layers in sample

Number

18

Arrangement

6 successive alternate adsorbed layers of Co, Fe and Pt

Layers

Pt , 1.4e-09 $mm$
Fe , 1.15e-09 $mm$
Co , 1e-09 $mm$
Pt , 1.4e-09 $mm$
Fe , 1.15e-09 $mm$
Co , 1e-09 $mm$
Pt , 1.4e-09 $mm$
Fe , 1.15e-09 $mm$
Co , 1e-09 $mm$
Pt , 1.4e-09 $mm$
Fe , 1.15e-09 $mm$
Co , 1e-09 $mm$
Pt , 1.4e-09 $mm$
Fe , 1.15e-09 $mm$
Co , 1e-09 $mm$
Pt , 1.4e-09 $mm$
Fe , 1.15e-09 $mm$
Co , 1e-09 $mm$