Tholins LATMOS Film 98 | SSHADE

Sample

Name: Tholins LATMOS Film 98%N2:2%CH4

Owner of sample

Database

SPAN

Experimentalists

Origin of sample

Date: 2011-01-31
Provider: Nathalie Carrasco at LATMOS

Physical characteristics

Thickness: 770.0 $\pm$ 25.0 $nm$
Surface roughness: 34nm +/- 2nm
Substrate material: Si
Comments: Homogeneous organic thin film

Sample environment: Temperature

Temperature: 295.0 $\pm$ 2.0 $K$
Comments: Sample kept at ambient temperature

Sample environment: Fluid

Type: ambient air
Fluid temperature: 295.0 $\pm$ 2.0 $K$
Fluid pressure: 1.0 $atm$

Layers in sample

Number

1

Layers

Tholins LATMOS F 98%N2:2%CH4 , 770.0 $nm$