Matter
Name
Tholins UARK 90N2 10CH4
Family
Family
carbonaceous
Database
Experimentalists
Origins
laboratory
Provider
NASA Ames Research Center
Image
Tholin #2 genesis in sputtering machine, view of the plasma in the second day, 13-11-2014
Tholin #2 genesis in sputtering machine, deposition after two days, 14-11-2014
Tholin #2 genesis in sputtering machine, end of deposition, 15-11-2014
Spectralon and glass sections covered by tholin #2 deposited in the sputtering machine, 15-11-2014
Tholins scratched from the glass surfaces were added to the tholins deposited on the Spectralon surface and put on a Petri dish that was placed below the optical fiber for the whole Experiment 2, 15-11-2014
Preparation
raw
Method
irradiation of CH4:N2=10%:90% gaseous mixture
Phase type
solid
Component type (group)
synthesized carbonaceous matter (plasma deposited product)
Texture
pulverulent
Type of porosity
particulate
Number
1
Mode of mixing
single material
Materials
  Name Arrangement Mass (g) Mass fraction Abundance comments
Tholins UARK 90N2 10CH4 0.06 60 mg of tholins #2 were scratched from the surface of the two glass sections that were located in the sputterig machine for tholin genesis. In addition, the Spectralon used in the 2014 experiment was also located in the sputtering machine and collecting additional matter. That matter was stuck to the Spectralon and could not be weighted. The total mass of tholins #2 used in the 2014 experiment is 60 mg - granular matter loss during transfer to the surface of Spectralon + unweighted mass of matter deposited on Spectralon.
Title
Tholins #2 synthesis by irradiation (Technics Hummer II sputtering system, DC current 0-50 mA, DC Voltage 100-3000 V)

Produced matter

Matter
Tholins UARK 90N2 10CH4 (this matter)
Processing steps
Step Date Type Process Changes
#1 2014-11-12 mixing mixing of $CH_4$ and $N_2$ gases in 10%:90% proportion gas mixture
#2 2014-11-12 irradiation irradiation of $CH_4$:$N_2$=10%:90% gas mixture at 20°C and 0.5 Torr, between November 12 and Nov 15. Technics Hummer II sputtering system, (DC current 0-50 mA, DC Voltage 100-3000 V), at a continuous gas flow (flow rate 10–40 sccm) and ambient temperature (293 K) formation of a tholins layer
#3 2014-11-15 mechanical scratching the layer to remove from the wall obtaining tholins powder