- Database
- Experimentalists
- Date
- 1992-01-01
- Surface roughness
- very low
- Substrate material
- between 2 MgF2 windows
- Comments
- Generic sample of experiments of beta N2 with different low CH4 concentrations: 0.1, 0.25, 0.8 and 2%
- Temperature
- 36.5 $\pm$ 0.3 $K$
- Temperature max
- 63.15 $\pm$ 0.1 $K$
- Comments
- Temperature error is mostly due to sample temperature gradient within the spot (1K/cm). Temperature maxi is the formation temperature (triple point)
- Number
- 1
- Layers
- Title
- Formation of alpha-N2:CH4 solid solution by solid-solid transition
- Matters
- Sample
- CH4 in beta-N2 crystalline (this sample)
- Processing steps
-
Step Chronology Date Type Process Changes #1 during layer formation 1992-01-01 layer formation N2:CH4 gas mixture (295K) condensed at ~65K condensation of liquid N2:CH4 (0.1, 0.25, 0.8 and 2% CH4) from gas phase mixture #2 during layer formation 1992-01-01 thermal slow cooling (0.5K/h) from ~65K to 63.15K under small vertical thermal gradient (0.5/mm) large polycrystals of solid beta-N2:CH4 solid solution grown from crystallisation of liquid N2:CH4 mixture