- Database
- Experimentalists
- Date
- 1995-04-25
- Thickness
- 0.275 $\pm$ 0.005 ${\mu}m$
- Diameter
- 20000.0 ${\mu}m$
- Volume
- 86000000.0 $micron^3$
- Substrate material
- CsI
- Substrate comments
- window 2mm thick
- Comments
- Thin film - 1st deposition
- Temperature
- 15.0 $\pm$ 0.5 $K$
- Temperature max
- 15.0 $\pm$ 0.5 $K$
- Comments
- heating from 15K to 38K
- Type
- vacuum
- Fluid pressure
- 1.0e-12 $\pm$ 1.0e-12 $bar$
- Comments
- residual UHV vacuum gases
- Publications
- Number
- 1
- Layers
-
- CH4 crystalline II - film 0.275µm , 0.275 ${\mu}m$
- Title
- Formation of CH4 solid phase
- Matters
- Sample
- CH4 crystalline II - film 0.275µm (this sample)
- Processing steps
-
Step Chronology Date Type Process Changes #1 during layer formation 1995-04-25 layer formation CH4 gas (300K - 10 mb) deposition at 15K under vacuum from gas to solid phase