- Database
- Experimentalists
- Date
- 2018-04-18
- Thickness
- 1.53e-08 $mm$
- Diameter
- 10.0 $mm$
- Substrate material
- Silicium
- Substrate comments
- Silicium wafer Si(100) - 350 microns
- Comments
- After deposition of all the layers, the sample is annealed under vacuum at 700◦C for 20 min.
- Temperature
- 293.0 $\pm$ 5.0 $K$
- Temperature max
- 293.0 $K$
- Type
- ambient air
- Fluid temperature
- 293.0 $K$
- Fluid pressure
- 1.0 $bar$
- Number
- 12
- Arrangement
- 6 successive alternate adsorbed layers of Co and Pt
- Layers