IOM from Murchison shocked at 10 GPa | GhoSST | SSHADE

Processing math: 100%

Sample

Name: IOM from Murchison shocked at 10 GPa

Owner of sample

Database

GhoSST

Experimentalists

Eric Quirico

Origin of sample

Date: 2010-01-01
Provider: IPAG

Physical characteristics

Thickness: 10.0 $\pm$ 5.0 ${\mu}m$
Diameter: 50.0 ${\mu}m$
Substrate material: Type IIa diamond windows
Comments: manual selection under binocular of about 10 IOM fragments of approximate diameter of 50 microns

Sample environment: Temperature

Temperature: 22.0 $\pm$ 2.0 $^{\circ}C$
Temperature max: 22.0 $\pm$ 2.0 $^{\circ}C$
Comments: sample prepared and stored, and data acquired under standard temperature and pressure conditions. The temperature may change during Raman data acquisition (laser irradiation), but it has not been quantified

Sample environment: Fluid

Type: ambient air
Fluid pressure: 1.0 $\pm$ 0.1 $atm$
Comments: MATair_lab_wet

Documentation and publication

Publications

Quirico et al., 2025, Meteorit. Planet. Sci.

Layers in sample

Number

1

Layers

IOM fragments of Murchison shocked at 10 GPa , 10.0 ${\mu}m$

Sample processings

Title

Preparation of the sample for IR measurements

Precursors

Matters

IOM Murchison shocked at 10 GPa

Produced sample

Sample

IOM from Murchison shocked at 10 GPa (this sample)

Processing steps

Step	Chronology	Date	Type	Process	Changes
#1	before layer formation		mechanical	Manual selection under optical binocular of about 10 IOM fragments of about 50 microns diameter.
#2	during layer formation		mechanical	Fragments pressed between two diamonds with a mechanical press	Fragments crushed down to a thickness of about 10 microns