Tholins LATMOS Film 95 | SSHADE

Sample

Name: Tholins LATMOS Film 95%N2:5%CH4

Owner of sample

Database

SPAN

Experimentalists

Origin of sample

Date: 2011-01-31
Provider: Nathalie Carrasco at LATMOS

Physical characteristics

Thickness: 850.0 $\pm$ 30.0 $nm$
Surface roughness: 15nm +/- 1nm
Substrate material: Si
Comments: Homogeneous organic thin film

Sample environment: Temperature

Temperature: 295.0 $\pm$ 2.0 $K$
Comments: Sample kept at ambient temperature

Sample environment: Fluid

Type: ambient air
Fluid temperature: 295.0 $\pm$ 2.0 $K$
Fluid pressure: 1.0 $atm$

Layers in sample

Number

1

Layers

Tholins thin film 95%N2:5%CH4 , 850.0 $nm$

Sample processings

Title

Tholins formation by plasma discharge in a 95%N2:5%CH4 gas mixture

Produced sample

Sample

Tholins LATMOS Film 95%N2:5%CH4 (this sample)

Processing steps

Step	Chronology	Date	Type	Process	Changes
#1		2011-01-31	fluid physical	Co-Injection in the PAMPRE chamber of 27.5 sccm of $N_2$:$CH_4$ in a 90%:10% and of 27.5 sccm of pure $N_2$ for a total gas flow of 55sscm
#2		2011-01-31	irradiation	irradiation using a RF CCP Plasma at 13.56 MHz and 30 W injected power of $CH_4$:$N_2$=5%:95% gas mixture at ambient temperature and 0.9 mbar	formation of a tholins thin film on Silicon wafer
#3		2011-01-31	no	Collecting the Silicon wafer with tholins thin film from the reactor (and thus exposing them to ambient air)	No changes observed macroscopically. Adsorption of traces of Oxygenated species on the thin film (not affecting optical properties)