- Database
- Experimentalists
- Date
- 2011-01-31
- Provider
- Nathalie Carrasco at LATMOS
- Thickness
- 910.0 $\pm$ 40.0 $nm$
- Surface roughness
- 10nm +/- 1nm
- Substrate material
- Si
- Comments
- Homogeneous organic thin film
- Temperature
- 295.0 $\pm$ 2.0 $K$
- Comments
- Sample kept at ambient temperature
- Type
- ambient air
- Fluid temperature
- 295.0 $\pm$ 2.0 $K$
- Fluid pressure
- 1.0 $atm$
- Number
- 1
- Layers
-
- Tholins LATMOS F 90%N2:10%CH4 , 910.0 $nm$