- Database
- Experimentalists
- Date
- 2016-01-31
- Provider
- Nathalie Carrasco at LATMOS
- Temperature
- 295.0 $\pm$ 2.0 $K$
- Comments
- Sample kept at ambient temperature
- Type
- ambient air
- Fluid temperature
- 295.0 $\pm$ 2.0 $K$
- Fluid pressure
- 1.0 $atm$
- Number
- 1
- Layers
- Title
- Tholins formation by plasma discharge in a 99%N2:1%CH4 gas mixture
- Sample
- Tholins LATMOS grain 99%N2:1%CH4 (this sample)
- Processing steps
-
Step Chronology Date Type Process Changes #1 before layer formation 2011-01-31 fluid physical Co-Injection in the PAMPRE chamber of 5.5 sccm of $N_2$:$CH_4$ gas in a 90%:10% ratio and of 49.5 sccm of pure $N_2$ gas for a total gas flow of 55 sscm #2 before layer formation 2011-01-31 irradiation irradiation using a RF CCP Plasma at 13.56 MHz and 30 W injected power of the $CH_4$:$N_2$=1%:99% gas mixture at ambient temperature and 0.9 mbar formation of tholins grains #3 before layer formation 2011-01-31 no Collecting tholins grains from the reactor (and thus exposing them to ambient air) No changes observed macroscopically