- Database
- Experimentalists
- Date
- 1995-01-01
- Thickness
- 0.2 $mm$
- Diameter
- 8.0 $mm$
- Comments
- The sample surface has the cylindrical shape of the silica tube (inner radius 4 mm) in which it was solidified.
- Temperature
- 300.0 $\pm$ 5.0 $K$
- Temperature max
- 300.0 $K$
- Type
- ambient air
- Fluid temperature
- 300.0 $K$
- Fluid pressure
- 1000.0 $mbar$
- Number
- 1
- Layers
-
- SiS$_2$, amorphous , 0.2 $mm$
- Title
- Preparation of the SiS$_2$ sample
- Sample
- SiS$_2$, amorphous (this sample)
- Processing steps
-
Step Chronology Date Type Process Changes #1 before layer formation 1996-01-01 mixing Mixing and homogenization of 0.6 g sulfur and 0.2628 g silicon and subsequent sealing of the mixture in a quartz tube with 8 mm inner diameter (under vacuum) #2 before layer formation 1996-01-01 thermal Gradually heating to 1373 K and holding the temperature constant for 60 hours for melting the mixture #3 during layer formation 1996-01-01 thermal Quenching of the melt by dropping the hot tube directly from furnace into water transparent SiS$_2$ glass was formed at the wall in the center of the tube #4 after layer formation 1996-01-01 mechanical Mounting of the glassy sample under argon atmosphere on a special sample holder for infrared reflection measurements at curved surfaces (4 mm radius of curvature)