- Database
- Experimentalists
- Date
- 1998-01-01
- Thickness
- 65.0 $nm$
- Substrate material
- silicon
- Temperature
- 300.0 $\pm$ 5.0 $K$
- Temperature max
- 1123.0 $K$
- Type
- ambient air
- Fluid temperature
- 300.0 $K$
- Fluid pressure
- 1000.0 $mbar$
- Number
- 1
- Layers
-
- SiC, amorphous , 65.0 $nm$
- Title
- Production of amorphous SiC
- Sample
- SiC, amorphous (this sample)
- Processing steps
-
Step Chronology Date Type Process Changes #1 before layer formation thermal Conversion of the polymer dimethylpolysilane (-Si(CH$_{3}$)$_{2}$)$_{n}$ to polycarbosilane (PCS) (-CH$_{2}$-SiHCH$_{3}$-CH$_{2}$-Si(CH$_{3}$)$_{2}$)$_{n}$ #2 during layer formation thermal Heating a sheet of polycarbosilane on Si substrate to 1123 K and hold for one hour. a thin film of SiC for IR transmission measurements was produced - Comments
- To avoid the oxidation of polycarbosilane to silicon oxide all preparational steps were applied in a glove box and the heating procedure was performed under dried argon atmosphere.