Tholins LATMOS Film-IR 99 | SSHADE

Sample

Name: Tholins LATMOS Film-IR 99%N2:1%CH4

Owner of sample

Database

SPAN

Experimentalists

Origin of sample

Date: 2011-01-31
Provider: Nathalie Carrasco at LATMOS

Physical characteristics

Thickness: 420.0 $\pm$ 10.0 $nm$
Surface roughness: 25nm +/- 10nm - might be surestimated
Substrate material: MirrIR
Substrate comments: MirrIR Low emission microscope plates from Kevley Technology
Comments: Homogeneous organic thin film

Sample environment: Temperature

Temperature: 295.0 $\pm$ 2.0 $K$
Comments: Sample kept at ambient temperature

Sample environment: Fluid

Type: ambient air
Fluid temperature: 295.0 $\pm$ 2.0 $K$
Fluid pressure: 1.0 $atm$

Layers in sample

Number

1

Layers

Tholins thin film 99%N2:1%CH4 , 420.0 $nm$

Sample processings

Title

Tholins formation by plasma discharge in a 99%N2:1%CH4 gas mixture

Produced sample

Sample

Tholins LATMOS Film-IR 99%N2:1%CH4 (this sample)

Processing steps

Step	Chronology	Date	Type	Process	Changes
#1		2011-01-31	fluid physical	Co-Injection in the PAMPRE chamber of 5.5 sccm of $N_2$:$CH_4$ gas in a 90%:10% ratio and of 49.5 sccm of pure $N_2$ gas for a total gas flow of 55 sscm
#2		2011-01-31	irradiation	irradiation using a RF CCP Plasma at 13.56 MHz and 30 W injected power of the $CH_4$:$N_2$=1%:99% gas mixture at ambient temperature and 0.9 mbar	formation of a tholins thin film on MirrIR substrates
#3		2011-01-31	no	Collecting the MirrIR substrates with tholins thin film from the reactor (and thus exposing them to ambient air)	No changes observed macroscopically. Adsorption of traces of Oxygenated species on the thin film (not affecting optical properties)